MBR1090CT Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual Common-Cathode High-Voltage Schottky Rectifier

MBR1090CT, MBR10100CT
TMBS^®
TO-220AB
PIN 1
PIN 3
3
2
1
PIN 2
CASE
PRIMARY CHARACTERISTICS
I_F(AV)
V_RRM
I_FSM
V_F
T_J max.
2 x 5.0 A
90 V, 100 V
120 A
0.75 V
150 °C
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
V_RRM
Working peak reverse voltage
V_RWM
Maximum DC blocking voltage
V_DC
Maximum average forward rectified current at T_C = 105 °C
total device
per diode
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
I_FSM
Non-repetitive avalanche energy
at T_J = 25 °C, L = 60 mH per diode
Peak repetitive reverse current at t_p = 2 µs, 1 kHz,
T_J = 38 °C ± 2 °C per diode
Voltage rate of change (rated V_R)
Operating junction and storage temperature range
E_AS
I_RRM
dV/dt
T_J, T_STG
MBR1090CT MBR10100CT
90
100
90
100
90
100
10
5.0
120
60
0.5
10 000
- 65 to + 150
UNIT
V
V
V
A
A
mJ
A
V/µs
°C
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