KSMU5P10 Datasheet, PDF (1/4 Pages) Kersemi Electronic Co., Ltd. – Excellent package for good heat dissipation.

KSMU5P10
KERSMI ELECTRONIC CO.,LTD.
-100V P-channel MOSFET
Description
This P-channel MOSFET s use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
ID
-100V
1.05Ω
-3.6A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-251
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-1
Continuous Drain Current-T=100℃
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Power Dissipation4
Operating and Storage Junction Temperature
Range
Ratings
-100
±20
-3.6
-2.28
-14.4
55
25
-55 to
+150
Units
V
V
A
mJ
W
℃
Thermal Characteristics
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