KSMU5N60C Datasheet, PDF (1/8 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET 600 V, 2.8 A, 2.5 Ω

KSMD5N60C / KSMU5N60C
N-Channel MOSFET ^{600 V, 2.8 A, 2.5 Ω}
Features
• 2.8 A, 600 V, R_DS(on) = 2.5 Ω (Max) @V_GS = 10 V,
I_D = 1.4 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 6.5 pF)
• 100% Avalanche Tested
• RoHS compliant
TO-252
TO-251
Description
This N-Channel enhancement mode power MOSFET is
produced using Kersemi Semiconductor^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C)*
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
KSMD5N60C / KSMU5N60C
600
2.8
1.8
11.2
± 30
210
2.8
4.9
4.5
2.5
49
0.39
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
Typ
Max
-
2.56
-
50
-
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
2014-7-3
1
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