KSMU10N20C Datasheet, PDF (1/6 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET 200 V, 7.8 A, 360 mΩ

KSMD10N20C / KSMU10N20C
N-Channel MOSFET ^{200 V, 7.8 A, 360 mΩ}
Features
• 7.8 A, 200 V, R_DS(on) = 360 mΩ (Max.)@ V_GS = 10 V,
I_D = 3.9 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested
TO-252
TO-251
Description
This N-Channel enhancement mode power MOSFET is
produced using ^{Kersemi Semiconductor ®}’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
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Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
KSMD10N20C / KSMU10N20C
200
7.8
5.0
31.2
± 30
210
7.8
5.0
5.5
50
0.4
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θJA
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient, Max.
KSMD10N20C / KSMU10N20C
2.5
50
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
2014-7-7
1
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