KSMF540 Datasheet, PDF (1/4 Pages) Kersemi Electronic Co., Ltd. – Low gate charge.

KSMF540
KERSMI ELECTRONIC CO.,LTD.
Description
100V N-channel MOSFET
This N-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
ID
100V
0.077Ω
17A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-220F
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-1
Continuous Drain Current-T=100℃
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Power Dissipation4
Operating and Storage Junction Temperature
Range
Ratings
100
±20
17
12
68
720
48
-55 to
+175
Units
V
V
A
mJ
W
℃
Thermal Characteristics
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