KSMF52N20T Datasheet, PDF (1/9 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET

KSM52N20 / KSMF52N20T
N-Channel MOSFET
200V, 52A, 0.049Ω
Features
• R_DS(on) = 0.041Ω ( Typ.)@ V_GS = 10V, I_D = 26A
• Low gate charge ( Typ. 49nC)
• Low C_rss ( Typ. 66pF)
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
TO-220
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Kersemi proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
D
G
S
TO-220F
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
KSM52N20 KSMF52N20T
200
±30
52
52*
33
33*
208
208*
2520
52
35.7
4.5
357
38.5
2.86
0.3
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
KSM52N20
0.35
0.5
62.5
KSMF52N20T
3.3
-
62.5
Units
o_C/W
2014-7-2
1
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