KSMD60N03L Datasheet, PDF (1/6 Pages) Kersemi Electronic Co., Ltd. – N-Channel Logic Level MOSFETs

Features
• Fast switching
• r_DS(ON) = 0.014Ω (Typ), V _GS = 10V
• r_DS(ON) = 0.024Ω (Typ), V _GS = 4.5V
• Q_g (Typ) = 9.6nC, V _GS = 5V
• Q_gd (Typ) = 3.4nC
• C_ISS (Typ) = 900pF
General Description
This device employs advanced MOSFET technology and
features low gate charge while maintaining low on-
resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
• DC/DC converters
KSMD60N03L
N-Channel Logic Level MOSFETs
30V, 30A, 0.023 Ω
TO-252AA
D
G
S
MOSFET Maximum Ratings T_C=25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
P_D
T_J, T _STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V _GS = 10V)
Continuous (T_C = 100^oC, V _GS = 4.5V)
Continuous (T_C = 25^oC, V _GS = 10V, R _θJA= 52^oC/W)
Pulsed
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Ratings
30
±20
30
19
7.9
Figure 4
45
0.37
-55 to 150
Thermal Characteristics
R_{θ JC}
R_{θ JA}
R_{θ JA}
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in ² copper pad area
2.73
100
52
Package Marking and Ordering Information
Device Marking
KSMD60N03L
Device
KSMD60N03L
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Units
V
V
A
A
A
A
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
Quantity
2500 units
2014-7-7
1
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