KSMD4N25 Datasheet, PDF (1/8 Pages) Kersemi Electronic Co., Ltd. – N-Channel MOSFET 250 V, 3 A, 1.75Ω

KSMD4N25 / KSMU4N25
N-Channel MOSFET 250 V, 3 A, 1.75Ω
Features
• 3 A, 250 V, R_DS(on) = 1.75 Ω (Max) @V_GS = 10 V,
I_D = 1.5 A
• Low Gate Charge (Typ. 4.3 nC)
• Low Crss (Typ. 4.8 pF)
• 100% Avalanche Tested
TO-252
TO-251
Description
This N-Channel enhancement mode power MOSFET is
produced using Kersemi Semiconductor ^®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.

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2014-7-8
1
www.kersemi.com