KSMD16N25C Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – 250V N-Channel MOSFET

Features
• 16A, 250V, R_DS(on) = 0.27Ω @V_GS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 68 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
KSMD16N25C
250V N-Channel MOSFET
TO-252
Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switching DC/DC converters, switch mode power
supplies, DC-AC converters for uninterrupted power supplies
and motor controls.
D
G
S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
KSMD16N25C
250
16
10.1
64
± 30
432
16
160
5.5
160
1.28
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
KSMD16N25C
0.78
110
Units
°C/W
°C/W
2014-7-8
1
www.kersemi.com