KSM4N90 Datasheet, PDF (1/6 Pages) Kersemi Electronic Co., Ltd. – 900V N-Channel MOSFET

Features
• 4.2A, 900V, R_DS(on) = 3.3 Ω @ V_GS = 10 V
• Low gate charge ( typically 24 nC)
• Low Crss ( typically 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
KSM4N90
900V N-Channel MOSFET
TO-220
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Kersemi proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_stg
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
KSM4N90
900
4.2
2.65
16.8
± 30
570
4.2
14
4.0
140
1.12
-55 to +150
300
Typ
Max
--
0.89
0.5
--
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
2014-6-25
1
www.kersemi.com