KSM2307 Datasheet, PDF (1/4 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

KSM2307
KERSMI ELECTRONIC CO.,LTD.
-30V P-channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
ID
-30V
0.088Ω
-2.7A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
SOT-23
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current-1
Continuous Drain Current-T=100℃
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Power Dissipation4
Operating and Storage Junction Temperature
Range
Ratings
-30
±20
-3.5
-2.8
-2.7
-2.2
1.8
260
Units
V
V
A
mJ
W
℃
Thermal Characteristics
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