IRLU9343 Datasheet, PDF (1/10 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

IRLR9343
IRLU9343
IRLU9343-701
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low R_DSON for Improved Efficiency
l Low Q_g and Q_sw for Better THD and Improved
Efficiency
l Low Q_rr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
D-Pak
IRLR9343
I-Pak
IRLU9343
D
G
S
Key Parameters
V_DS
-55
V
R_DS(ON) typ. @ V_GS = -10V
93
m:
R_DS(ON) typ. @ V_GS = -4.5V
150
m:
Q_g typ.
31
nC
T_J max
175
°C
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current c
Power Dissipation
P_D @T_C = 100°C
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Clamping Pressure h
Thermal Resistance
Parameter
R_θJC
Junction-to-Case g
R_θJA
Junction-to-Ambient (PCB Mounted) gj
R_θJA
Junction-to-Ambient (free air) g
Max.
-55
±20
-20
-14
-60
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
2014-8-16
1
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