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| IRLR3715Z Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
gà Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
IRLR3715Z
IRLU3715Z
D-Pak
IRLR3715Z
I-Pak
IRLU3715Z
VDSS RDS(on) max Qg
20V
: 11m
7.2nC
Max.
20
± 20
49f
35f
200
40
20
0.27
-55 to + 175
300 (1.6mm from case)
Units
V
A
W
W/°C
°C
Typ.
âââ
âââ
âââ
Max.
3.75
50
110
Units
°C/W
2014-8-24
1
www.kersemi.com
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