IRLR3110Z Datasheet, PDF (1/13 Pages) Kersemi Electronic Co., Ltd. – Advanced Process Technology

Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
G
l Automotive Qualified *
Description
Specifically designed for Automotive applications, thi
Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
AUIRLR3110Z
AUIRLU3110Z
D V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
S ^{ID (Package Limited)}
100V
11mΩ
k ^14mΩ
63A
42A
D-Pak
AUIRLR3110Z
I-Pak
AUIRLU3110Z
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_{AS (Thermally limited)}
E_AS (Tested )
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
h Single Pulse Avalanche Energy Tested Value
Ù Avalanche Current
g Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
63 k
45 k
42
250
140
0.95
±16
110
140
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y 10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Parameter
R_θJC
R_θJA
j Junction-to-Case
i Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.05
40
110
Units
°C/W
2014-8-24
1
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