IRLR2905 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

IRLR/U2905
l Logic-Level Gate Drive
l Ultra Low On-Resistance
l Surface Mount (IRLR2905)
l Straight Lead (IRLU2905)
l Advanced Process Technology
l Fast Switching
l Fully Avalanche Rated
D -P ak
T O -252AA
I-P a k
TO -251AA
Description
The D-PAK is designed for surface mounting
using vapor phase, infrared, or wave solde
ring techniques. The straight lead version
(IRFU series) is for through-hole mounting
applications. Power dissipation levels up to
G
1.5 watts are possible in typical surface
mount applications.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
D
V_DSS = 55V
R_DS(on) = 0.027Ω
I_D = 42A…
S
Max.
42 …
30
160
110
0.71
± 16
210
25
11
5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
50
110
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
2014-8-25
1
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