IRFZ44NS Datasheet, PDF (1/10 Pages) NXP Semiconductors – N-channel enhancement mode TrenchMOS transistor

l Advanced Process Technology
l Surface Mount (IRFZ44NS)
l Low-profile through-hole (IRFZ44NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
IRFZ44NS
IRFZ44NL
TO-262
TO-263
Description
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D²Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
G
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
D
V_DSS = 55V
R_DS(on) = 0.0175Ω
I_D = 49A
S
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
V_GS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
49
35
160
3.8
94
0.63
± 20
25
9.4
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
1.5
40
Units
°C/W
2014-8-30
1
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