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| IRFZ34N Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A) | |||
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IRFZ34N
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
VDSS = 55V
RDS(on) = 0.040â¦
ID = 26A
TO-220AB
Description
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
2014-8-9
1
Max.
26
18
100
56
0.37
±20
110
16
5.6
4.6
-55 to + 175
300 (1.6mm from case)
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Min.
ââââ
ââââ
ââââ
Typ.
ââââ
0.50
ââââ
Max.
2.7
ââââ
62
Units
°C/W
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