IRFZ24 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Power MOSFET

IRFZ24, SiHFZ24
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
60
V_GS = 10 V
25
5.8
11
Single
0.10
D
TO-220AB
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRFZ24PbF
SiHFZ24-E3
IRFZ24
SiHFZ24
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
T_C = 25 °C
V_GS at 10 V
I_D
T_C = 100 °C
I_DM
Single Pulse Avalanche Energy^b
E_AS
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 403 μH, R_g = 25 , I_AS = 17 A (see fig. 12).
c. I_SD  17 A, dI/dt  140 A/μs, V_DD  V_DS, T_J  175 °C.
d. 1.6 mm from case.
LIMIT
60
± 20
17
12
68
0.40
100
60
4.5
- 55 to + 175
300^d
10
1.1
UNIT
V
A
W/°C
mJ
W
V/ns
°C
lbf · in
N·m
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