IRFU9120 Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 100
V_GS = - 10 V
18
3.0
9.0
Single
0.60
S
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9120/SiHFR9120)
• Straight Lead (IRFU9120/SiHFU9120)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
IPAK
(TO-252)
(TO-251)
G
D
P-Channel MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9120PbF
SiHFR9120-E3
SnPb
IRFR9120
SiHFR9120
Note
a. See device orientation.
DPAK (TO-252)
IRFR9120TRPbF^a
SiHFR9120T-E3^a
IRFR9120TR^a
SiHFR9120T^a
DPAK (TO-252)
IRFR9120TRLPbF^a
SiHFR9120TL-E3^a
IRFR9120TRL^a
SiHFR9120TL^a
IPAK (TO-251)
IRFU9120PbF
SiHFU9120-E3
IRFU9120PbF
SiHFU9120
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
Pulsed Drain Current^a
T_C = 25 °C
V_GS at - 10 V
I_D
T_C = 100 °C
I_DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
E_AS
Repetitive Avalanche Current^a
I_AR
Repetitive Avalanche Energy^a
E_AR
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
P_D
dV/dt
LIMIT
- 100
± 20
- 5.6
- 3.6
- 22
0.33
0.020
210
- 5.6
4.2
42
2.5
- 5.5
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
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