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IRFU3709PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET®Power MOSFET | |||
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PD - 95519A
SMPS MOSFET
IRFU3709PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
9.0mâ¦
ID
90AÂ
I-Pak
IRFU3709
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain CurrentÂ
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
±20
90 Â
57 Â
360
120
48
0.96
-55 to + 150
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
âââ
âââ
Max.
1.04
110
Units
°C/W
www.kersemi.com
1
12/06/04
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