IRFU214 Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET

IRFR214, IRFU214, SiHFR214, SiHFU214
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
250
V_GS = 10 V
2.0
8.2
1.8
4.5
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210/SiHFR9210)
• Straight Lead (IRFU9210/SiHFU9210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D-PAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR214PbF
SiHFR214-E3
SnPb
IRFR214
SiHFR214
Note
a. See device orientation.
DPAK (TO-252)
IRFR214TRLPbF^a
SiHFR214TL-E3^a
-
-
DPAK (TO-252)
IRFR214TRPbF^a
SiHFR214T-E3^a
IRFR214TR^a
SiHFR214T^a
DPAK (TO-252)
-
-
IRFR214TRR^a
SiHFR214TR^a
IPAK (TO-251)
IRFU214PbF
SiHFU214-E3
IRFU214
SiHFU214
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 50 V, Starting T_J = 25 °C, L = 62 mH, R_G = 25 Ω, I_AS = 2.2 A (see fig. 12).
c. I_SD ≤ 2.2 A, dI/dt ≤ 65 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 Material).
LIMIT
250
± 20
2.2
1.4
8.8
0.20
0.020
190
2.2
2.5
25
2.5
4.8
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
W
V/ns
°C
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