IRFU120Z Datasheet, PDF (1/11 Pages) Kersemi Electronic Co., Ltd. – AUTOMOTIVE MOSFET

AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
G
l Lead-Free
PD - 95772A
IRFR120ZPbF
IRFU120ZPbF
HEXFET^® Power MOSFET
D
V_DSS = 100V
R_DS(on) = 190mΩ
I_D = 8.7A
S
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR120Z
I-Pak
IRFU120Z
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
i ^{Junction-to-Case}
Junction-to-Ambient (PCB mount)
R_θJA
Junction-to-Ambient
Max.
8.7
6.1
35
35
0.23
± 20
18
20
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
4.28
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.kersemi.com
1
12/06/04