IRFR9N20D Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)

PD - 93919A
SMPS MOSFET
Applications
l High frequency DC-DC converters
V_DSS
200V
IRFR9N20D
IRFU9N20D
HEXFET^® Power MOSFET
R_DS(on) max
I_D
0.38Ω
9.4A
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR9N20D
I-Pak
IRFU9N20D
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Typical SMPS Topologies
Max.
9.4
6.7
38
86
0.57
± 30
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
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