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IRFR9310TRL Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET
IRFR9310, IRFU9310, SiHFR9310, SiHFU9310
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 400
VGS = - 10 V
7.0
13
3.2
5.0
Single
D PAK
(TO-252)
IPAK
(TO-251)
S
G
D
P-Channel MOSFET
FEATURES
• P-Channel
• Surface Mount (IRFR9310/SiHFR9310)
• Straight Lead (IRFU9310/SiHFU9310)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9310PbF
Lead (Pb)-free
SiHFR9310-E3
SnPb
IRFR9310
SiHFR9310
Note
a. See device orientation.
DPAK (TO-252)
IRFR9310TRLPbFa
SiHFR9310TL-E3a
IRFR9310TRLa
SiHFR9310TLa
DPAK (TO-252)
IRFR9310TRPbFa
SiHFR9310T-E3a
IRFR9310TRa
SiHFR9310Ta
DPAK (TO-252)
IRFR9310TRRPbFa
SiHFR9310TR-E3a
-
-
IPAK (TO-251)
IRFU9310PbF
SiHFU9310-E3
IRFU9310
SiHFU9310
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
LIMIT
- 400
± 20
- 1.8
- 1.1
- 7.2
0.40
92
- 1.8
5.0
50
- 24
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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