IRFR9210TRL Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 200
V_GS = - 10 V
3.0
8.9
2.1
3.9
Single
S
DPAK
IPAK
(TO-252)
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210/SiHFR9210)
• Straight Lead (IRFU9210/SiHFU9210)
Available
RoHS*
COMPLIANT
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9210PbF
SiHFR9210-E3
SnPb
Note
a. See device orientation.
IRFR9210
SiHFR9210
DPAK (TO-252)
IRFR9210TRPbF^a
SiHFR9210T-E3^a
IRFR9210TR^a
SiHFR9210T^a
DPAK (TO-252)
-
-
IRFR9210TRL^a
SiHFR9210TL^a
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
IPAK (TO-251)
IRFU9210PbF
SiHFU9210-E3
IRFU9210
SiHFU9210
LIMIT
- 200
± 20
- 1.9
- 1.2
- 7.6
0.20
0.020
300
- 1.9
2.5
25
2.5
- 5.0
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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