IRFR9110TRL Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET

IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 100
V_GS = - 10 V
1.2
8.7
2.2
4.1
Single
DPAK
(TO-252)
IPAK
(TO-251)
S
G
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9110/SiHFR9110)
• Straight Lead (IRFU9110/SiHFU9110)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU Series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9110PbF
SiHFR9110-E3
SnPb
IRFR9110
SiHFR9110
Note
a. See device orientation.
DPAK (TO-252)
IRFR9110TRLPbF^a
SiHFR9110TL-E3^a
IRFR9110TRL^a
SiHFR9110TL^a
DPAK (TO-252)
IRFR9110TRPbF^a
SiHFR9110T-E3^a
IRFR9110TR^a
SiHFR9110T^a
IPAK (TO-251)
IRFU9110PbF
SiHFU9110-E3
IRFU9110
SiHFU9110
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 21 mH, R_G = 25 Ω, I_AS = - 3.1 A (see fig. 12).
c. I_SD ≤ - 4.0 A, dI/dt ≤ 75 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
- 100
± 20
- 3.1
- 2.0
- 12
0.20
0.020
140
- 3.1
2.5
25
2.5
- 5.5
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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