IRFR9014TRR Datasheet, PDF (1/7 Pages) Kersemi Electronic Co., Ltd. – Power MOSFET

IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 60
V_GS = - 10 V
12
3.8
5.1
Single
0.50
S
DPAK
IPAK
(TO-252)
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9014/SiHFR9014)
• Straight Lead (IRFU9014/SiHFU9014)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9014PbF
SiHFR9014-E3
SnPb
IRFR9014
SiHFR9014
Note
a. See device orientation.
DPAK (TO-252)
IRFR9014TRLPbF^a
SiHFR9014TL-E3^a
IRFR9014TRL^a
SiHFR9014TL^a
DPAK (TO-252)
IRFR9014TRPbF^a
SiHFR9014T-E3^a
IRFR9014TR^a
SiHFR9014T^a
IPAK (TO-251)
IRFU9014PbF
SiHFU9014-E3
IRFU9014
SiHFU9014
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Linear Derating Factor (PCB Mount)^e
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)^e
Peak Diode Recovery dV/dt^c
V_DS
V_GS
V_GS at 5.0 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
T_C = 25 °C
T_A = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)
for 10 s
LIMIT
- 60
± 20
- 5.1
- 3.2
- 20
0.20
0.020
140
- 5.1
2.5
25
2.5
- 4.5
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = - 25 V, starting T_J = 25 °C, L = 6.3 mH, R_G = 25 Ω, I_AS = - 5.1 A (see fig. 12).
c. I_SD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
www.kersemi.com
1