IRFR420A Datasheet, PDF (1/7 Pages) International Rectifier – SMPS MOSFET

IRFR420A, IRFU420A, SiHFR420A,
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
500
V_GS = 10 V
3.0
Q_g (Max.) (nC)
17
Q_gs (nC)
4.3
Q_gd (nC)
8.5
Configuration
Single
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
FEATURES
• Low Gate Charge Q_g Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Effective C_oss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
N-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR420APbF
SiHFR420A-E3
SnPb
IRFR420A
SiHFR420A
Note
a. See device orientation.
DPAK (TO-252)
IRFR420ATRPbF^a
SiHFR420AT-E3^a
-
-
DPAK (TO-252)
IRFR420ATRLPbF
SiHFR420ATL-E3
-
-
IPAK (TO-251)
IRFU420APbF
SiHFU420A-E3
IRFU420A
SiHFU420A
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
T_C = 25 °C
V_DS
V_GS
I_D
I_DM
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 45 mH, R_G = 25 Ω, I_AS = 2.5 A (see fig. 12).
c. I_SD ≤ 2.5 A, dI/dt ≤ 270 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
500
± 30
3.3
2.1
10
0.67
140
2.5
5.0
83
3.4
- 55 to + 150
300^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
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