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| IRFR3711ZCPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
VDSS
20V
IRFR3711ZCPbF
IRFU3711ZCPbF
HEXFET® Power MOSFET
RDS(on) max Qg
5.7m:
18nC
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D-Pak
I-Pak
IRFR3711ZCPbF IRFU3711ZCPbF
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
g Maximum Power Dissipation
g Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
gà Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
www.kersemi.com
Max.
20
± 20
93f
66f
370
79
39
0.53
-55 to + 175
300 (1.6mm from case)
Typ.
âââ
âââ
âââ
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
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