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| IRFR3704ZPBF Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET Power MOSFET | |||
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 95442A
IRFR3704ZPbF
IRFU3704ZPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V
8.4m: 9.3nC
D-Pak
IRFR3704Z
I-Pak
IRFU3704Z
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
 Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
gà Junction-to-Ambient (PCB Mount)
RθJA
Junction-to-Ambient
Max.
20
± 20
60f
42f
240
48
24
0.32
-55 to + 175
300 (1.6mm from case)
Typ.
âââ
âââ
âââ
Max.
3.1
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
www.kersemi.com
1
12/03/04
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