IRFR3518 Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

Applications
l High frequency DC-DC converters
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C_OSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
PD - 94523
V_DSS
80V
IRFR3518
IRFU3518
HEXFET^® Power MOSFET
R_DS(on) max
I_D
29mW
30A
D-Pak
IRFR3518
I-Pak
IRFU3518
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
dv/dt
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)†
Junction-to-Ambient
Max.
80
± 20
38
27
150
110
0.71
5.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
–––
Max.
1.4
40
110
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
www.kersemi.com
1
09/23/02