IRFR3412TRR Datasheet, PDF (1/10 Pages) Kersemi Electronic Co., Ltd. – Switch Mode Power Supply (SMPS)

Applications
l Switch Mode Power Supply (SMPS)
l Motor Drive
l Bridge Converters
l All Zero Voltage Switching
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Enhanced Body Diode dv/dt Capability
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 second
Mounting torqe, 6-32 or M3 screw
IRFR3412
IRFU3412
V_DSS
100V
R_DS(on) max
0.025Ω
I_D
48A†
D-Pak
IRFR3412
I-Pak
IRFU3412
Max.
48†
34†
190
140
0.95
± 20
6.4
-55 to + 175
300(1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Diode Characteristics
Symbol
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
t_rr
Q_rr
I_RRM
t_on
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
www.kersemi.com
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 48† _{A showing the}
integral reverse
G
––– ––– 190
p-n junction diode.
S
––– ––– 1.3 V T_J = 25°C, I_S = 29A, V_GS = 0V „
––– 68 100 ns T_J = 125°C, I_F = 29A
––– 160 240 nC di/dt = 100A/µs „
––– 4.5 6.8 A
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
1
1/22/02