IRFR2905 Datasheet, PDF (1/11 Pages) International Rectifier – AUTOMOTIVE MOSFET

PD - 95811
IRFR2905Z
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
G
IRFU2905Z
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 14.5mΩ
I_D = 42A
S
Description
Specifically designed for Automotive applications, this HEXFET^®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR2905Z
I-Pak
IRFU2905Z
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_C = 100°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
d _{EAS (Thermally limited)} Single Pulse Avalanche Energy
h _{EAS (Tested )} Single Pulse Avalanche Energy Tested Value
Ù _IAR
Avalanche Current
g _EAR
Repetitive Avalanche Energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θJA
R_θJA
j ^Parameter
Junction-to-Case
ij Junction-to-Ambient (PCB mount)
j Junction-to-Ambient
Max.
59
42
42
240
110
0.72
± 20
55
82
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y 10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.38
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
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11/24/03