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| IRFR24N15D Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET | |||
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IRFR24N15D
IRFU24N15D
Applications
l High frequency DC-DC converters
D-Pak
IRFR24N15D
I-Pak
IRFU24N15D
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
VDSS RDS(on) max
ID
150V
95mâ¦
24A
Max.
24
17
96
140
0.92
± 30
4.9
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Typ.
âââ
âââ
âââ
Max.
1.1
50
110
Units
°C/W
2014-8-16
1
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