IRFL4105 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)

IRFL4105
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
G
l Fully Avalanche Rated
Description
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1.0W
is possible in a typical surface mount application.
MOSFET
D
V_DSS = 55V
R_DS(on) = 0.045Ω
I_D = 3.7A
S
S O T -22 3
Absolute Maximum Ratings
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 10V**
Continuous Drain Current, V_GS @ 10V*
Continuous Drain Current, V_GS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
R_θJA
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Max.
5.2
3.7
3.0
30
2.1
1.0
8.3
± 20
110
3.7
0.10
5.0
-55 to + 150
Typ.
90
50
Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
2014-8-9
1
www.kersemi.com