IRFI530G Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET POWER MOSFET

IRFI530G
Power MOSFET
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV_RMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
TO-220 FULLPAK
D
G
S
N-Channel MOSFET
DESCRIPTION
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
100
V_GS = 10 V
33
5.4
15
Single
0.16
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFI530GPbF
SiHFI530G-E3
IRFI530G
SiHFI530G
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V_DD = 25 V, starting T_J = 25 °C, L = 1.6 mH, R_G = 25 Ω, I_AS = 9.7 A (see fig. 12).
c. I_SD ≤ 9.7 A, dI/dt ≤ 140 A/µs, V_DD ≤ V_DS, T_J ≤ 175 °C.
d. 1.6 mm from case.
2014-8-13
1
LIMIT
100
± 20
9.7
6.9
39
0.28
100
9.7
4.2
42
5.5
- 55 to + 175
300^d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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