IRF7311 Datasheet, PDF (1/7 Pages) International Rectifier – HEXFET Power MOSFET

IRF7311
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
MOSFET
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_DSS = 20V
R_DS(on) = 0.029Ω
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O P -8
Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
± 12
Continuous Drain Current…
T_A = 25°C
T_A = 70°C
I_D
6.6
5.3
Pulsed Drain Current
I_DM
26
Continuous Source Current (Diode Conduction)
I_S
2.5
Maximum Power Dissipation …
T_A = 25°C
T_A = 70°C
P_D
2.0
1.3
Single Pulse Avalanche Energy ‚
E_AS
100
Avalanche Current
I_AR
4.1
Repetitive Avalanche Energy
E_AR
0.20
Peak Diode Recovery dv/dt ƒ
dv/dt
5.0
Junction and Storage Temperature Range
T_J, T_STG
-55 to + 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient…
Symbol
R_θJA
Limit
62.5
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Units
°C/W
2014-8-8
1
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