IRF7303 Datasheet, PDF (1/9 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

IRF7303
l Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
MOSFET
1
S1
G1
2
S2
3
G2
4
8
D1
7
D1
V_DSS = 30V
6
D2
5 _{D 2 RDS(on) = 0.050Ω}
Top View
Description
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
Absolute Maximum Ratings
I_D @ T_A = 25°C
I_D @ T_A = 25°C
ID @ TA = 70°C
I_DM
PD @TA = 25°C
V_GS
dv/dt
T_J, T_STG
Parameter
10 Sec. Pulsed Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
S O P -8
Max.
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
2014-8-8
1
Typ.
–––
Max.
62.5
Units
°C/W
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