IRF530NS Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

IRF530NS
IRF530NL
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
G
l Fully Avalanche Rated
Description
The D²Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
D
V_DSS = 100V
R_DS(on) = 90mΩ
I_D = 17A
S
D²Pak
IRF530NS
TO-262
IRF530NL
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V ‡
Continuous Drain Current, V_GS @ 10V ‡
Pulsed Drain Current ‡
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
Max.
17
12
60
3.8
70
0.47
± 20
9.0
7.0
7.4
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
2.15
40
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
2014-8-28
1
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