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| IRF3710 Datasheet, PDF (1/8 Pages) International Rectifier – Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) | |||
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
IRF3710
Power MOSFET
D
VDSS = 100V
RDS(on) = 23mâ¦
G
ID = 57A
S
TO-220AB
Description
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current Â
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt Â
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
2014-8-10
1
Max.
57
40
230
200
1.3
± 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
âââ
0.50
âââ
Max.
0.75
âââ
62
Units
°C/W
www.kersemi.com
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