IRF1404S Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A⑥)

l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
D²Pak
IRF1404S
IRF1404S
IRF1404L
TO-262
IRF1404L
Description
The D²Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D²Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF1404L) is available for low-
profile applications.
G
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V‡
Continuous Drain Current, V_GS @ 10V‡
Pulsed Drain Current ‡
Power Dissipation
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‡
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ‡
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)*
Power MOSFET
D
V_DSS = 40V
R_DS(on) = 0.004Ω
I_D = 162A†
S
Max.
162†
115†
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to +175
-55 to +175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
2014-8-12
1
www.kersemi.com