|
IRF1010NS Datasheet, PDF (1/10 Pages) International Rectifier – Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A⑦) | |||
|
IRF1010NS
IRF1010NL
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
D 2 Pak
IRF1010NS
T O -26 2
IRF1010NL
Description
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
G
The through-hole version (IRF1010NL) is available for low-
profile applications.
D
VDSS = 55V
RDS(on) = 11mâ¦
ID = 85AÂ
S
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V Â
Continuous Drain Current, VGS @ 10V Â
Pulsed Drain Current ÂÂ
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche CurrentÂ
Repetitive Avalanche EnergyÂ
Peak Diode Recovery dv/dt ÂÂ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Max.
85Â
60
290
180
1.2
± 20
43
18
3.6
-55 to + 175
300 (1.6mm from case )
10 lbfâ¢in (1.1Nâ¢m)
Typ.
âââ
âââ
Max.
0.85
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
2014-8-30
1
www.kersemi.com
|
▷ |