FQD2N60C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V N-Channel MOSFET

FQD2N60C / FQU2N60C
N-Channel QFET^® MOSFET
600 V, 1.9 A, 4.7 Ω
Features
• 1.9 A, 600 V, R_DS(on) = 4.7 Ω (Max.) @ V_GS = 10 V,
I_D = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• RoHS Compliant
G
S
D
D-PAK
Description
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
G
D
S
I-PAK
G!
D
!
●
◀▲
●
●
!
S
Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C)*
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
FQD2N60C / FQU2N60C
600
1.9
1.14
7.6
± 30
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_θJC
Thermal Resistance, Junction-to-Case, Max.
R_θJA
Thermal Resistance, Junction-to-Ambient*
R_θJA
Thermal Resistance, Junction-to-Ambient, Max.
* When mounted on the minimum pad size recommended (PCB Mount)
FQD2N60C / FQU2N60C
2.87
50
110
Unit
°C/W
°C/W
°C/W
1
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