DSEI60-06A Datasheet, PDF (1/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED)

DSEI 60 I_FAVM = 60 A V_RSM
V_RRM = 600 V ^V
t_rr = 35 ns ⁶⁰⁰
Features
q _{International standard package}
JEDEC TO-247 AD
q _{Planar passivated chips}
q _{Very short recovery time}
q _{Extremely low switching losses}
q _{Low I -values}
RM
q _{Soft recovery behaviour}
q _{Epoxy meets UL 94V-0}
Applications
q _{Antiparallel diode for high frequency}
switching devices
q _{Anti saturation diode}
q _{Snubber diode}
q _{Free wheeling diode in converters}
and motor control circuits
q _{Rectifiers in switch mode power}
supplies (SMPS)
q _{Inductive heating and melting}
q _{Uninterruptible power supplies (UPS)}
q _{Ultrasonic cleaners and welders}
Symbol
I_FRMS
I_FAVM ÿÿx
I_FRM
I_FSM
I²t
T_VJ
T_VJM
T_stg
P_tot
M_d
Weight
Symbol
Advantages
q _{High reliability circuit operation}
q _{Low voltage peaks for reduced}
protection circuits
q _{Low noise switching}
q _{Low losses}
q _{Operating at lower temperature or}
space saving by reduced cooling
I_R
V_F
V_T0
r_T
R_thJC
R_thCK
R_thJA
t_rr
I_RM
DSEI60-06A
Fast Recovery Epitaxial Diode (FRED)
V_RRM
V
600
Type
DSEI 60-06A
A
TO-247 AD
C
A
C
C
A = Anode, C = Cathode
Test Conditions
T_VJ = T_VJM
T_C = 70°C; rectangular, d = 0.5
t_P < 10 ms; rep. rating, pulse width limited by T_VJM
T_VJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_C = 25°C
Mounting torque
Maximum Ratings
100
A
60
A
800
A
550
A
600
A
480
A
520
A
1510
A²s
1490
A²s
1150
A²s
1120
A²s
-40...+150
°C
150
°C
-40...+150
°C
166
W
0.8...1.2
Nm
6
g
Test Conditions
Characteristic Values
typ.
max.
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 125°C
V_R = V_RRM
V_R = 0.8 • V_RRM
V_R = 0.8 • V_RRM
I_F = 70 A;
T_VJ = 150°C
T_VJ = 25°C
For power-loss calculations only
T_VJ = T_VJM
0.25
I_F = 1 A; -di/dt = 200 A/ms; V_R = 30 V; T_VJ = 25°C 35
V_R = 350 V; I_F = 60 A; -di_F/dt = 480 A/ms
19
L £ 0.05 mH; T_VJ = 100°C
200
100
14
1.5
1.8
1.13
4.7
0.75
35
50
21
mA
mA
mA
V
V
V
mW
K/W
K/W
K/W
ns
A
2014-8-7
1
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