CR03AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR03AM
CR03AM
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
1 CATHODE
2 ANODE
3 GATE
VOLTAGE
CLASS
TYPE
NAME
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
APPLICATION
Leakage protector, timer, gas ignitor
3 21
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
800
V
VR (DC)
DC reverse voltage
320
VDRM
Repetitive peak off-state voltage ^V1
400
VDSM
Non-repetitive peak off-state voltage ^V1
500
VD (DC)
DC off-state voltage
V1
320
480
V
600
V
800
V
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=47°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
0.47
A
0.3
A
20
A
1.6
A²s
0.5
W
0.1
W
6
V
6
V
0.3
A
–40 ~ +110
°C
–40 ~ +125
°C
0.23
g
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