C122F1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

C122F1, C122B1
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
• Glass Passivated Junctions and Center Gate Fire for Greater
Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 200 Volts
• Device Marking: Logo, Device Type, e.g., C122F1, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = 25 to 100°C, Sine Wave,
50 to 60 Hz; Gate Open)
VDRM,
VRRM
C122F1
50
C122B1
200
Unit
Volts
On-State RMS Current
IT(RMS)
8.0
Amps
(180° Conduction Angles; TC = 75°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
TC = 75°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
90
Amps
34
A2s
Forward Peak Gate Power
(Pulse Width = 10 µs, TC = 70°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 70°C)
Forward Peak Gate Current
(Pulse Width = 10 µs, TC = 70°C)
Operating Junction Temperature Range
PGM
PG(AV)
IGM
TJ
5.0
0.5
2.0
– 40 to
+125
Watts
Watt
Amps
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
www.kersemi.com
SCRs
8 AMPERES RMS
50 thru 200 VOLTS
G
A
K
4
1
2
3
TO–220AB
CASE 221A
STYLE 3
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
C122F1
TO220AB
500/Box
C122B1
TO220AB
500/Box
1