BT151-6500R Datasheet, PDF (1/3 Pages) Kersemi Electronic Co., Ltd. – Advanced high cell denity trench technology for ultra RDS(ON)

BT151-650R
KERSMI ELECTRONIC CO.,LTD.
650V
Description
This MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
SYMBOL
VDRM
ID
PARAMETER
BT151-
Repetitive peak off-state
RMS on-state current
Features
MAX
500R
500
12
MAX
650R
650
12
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
MAX
800R
800
12
UNIT
V
A
TO-220
Thermal Characteristics
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
—
60
Units
K/W
Package Marking and Ordering Information
Part NO.
BT151-6500R
Marking
BT151-650R
Package
TO-220
www.kersemi.com
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