BT151-500R Datasheet, PDF (1/4 Pages) NXP Semiconductors – SCR, 12 A, 15mA, 500 V, SOT78

MCR100-500R
KERSMI ELECTRONIC CO.,LTD.
500V
Description
This MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
ID
500V
7.5A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-220
Thermal Characteristics
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
—
60
Units
K/W
Package Marking and Ordering Information
Part NO.
BT151-500R
Marking
BT151-500T
Package
TO-220
www.kersemi.com
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