BT137X-600D Datasheet, PDF (1/5 Pages) NXP Semiconductors – Repetitive peak off-state voltages

BT137X series
GENERAL DESCRIPTION
Glass passivated triacs in a full pack
plastic envelope, intended for use in
applications
requiring
high
bidirectional transient and blocking
voltage capability and high thermal
cycling performance. Typical
applications include motor control,
industrial and domestic lighting,
heating and static switching.
QUICK REFERNCE DATA
SYMBOL
T2
T1
G
SOT186A
TO-220F
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
VDRM
I_T(RMS)
ITSM
BT137X- 500 600 800
BT137X- 500F 600F 800F
BT137X- 500G 600G 800G
Repetitive peak off-state
500 600 800 V
voltages
RMS on-state current
8
8
8A
Non-repetitive peak on-state 65 65 65 A
current
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DRM
I_T(RMS)
I_TSM
I²t
dI_T/dt
I_GM
V_GM
P_GM
P_G(AV)
T_stg
T_j
Repetitive peak off-state
-
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave; T_hs ≤ 73 ˚C
-
full sine wave; T_j = 25 ˚C prior to
surge
t = 20 ms
-
t = 16.7 ms
-
I²t for fusing
t = 10 ms
-
Repetitive rate of rise of I_TM = 12 A; I_G = 0.2 A;
on-state current after
dI_G/dt = 0.2 A/µs
triggering
T2+ G+
-
T2+ G-
-
T2- G-
-
T2- G+
-
Peak gate current
-
Peak gate voltage
-
Peak gate power
-
Average gate power
over any 20 ms period
-
Storage temperature
-40
Operating junction
-
temperature
-500
500¹
MAX.
-600
600¹
8
65
71
21
50
50
50
10
2
5
5
0.5
150
125
-800
800
UNIT
V
A
A
A
A²s
A/µs
A/µs
A/µs
A/µs
A
V
W
W
˚C
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
2014-6-11
1
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