BT131-600E Datasheet, PDF (1/4 Pages) NXP Semiconductors – Triacs logic level

BT131-600E
KERSMI ELECTRONIC CO.,LTD.
600V
Description
This MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
ID
600V
1A
1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON)
4) Excellent package for good heat dissipation.
TO-92
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Thermal Characteristics
Symbol
RƟJC
RƟJA
Parameter
Thermal Resistance ,Junction to Case1
Thermal Resistance, Junction to Ambient1
Ratings
—
—
Units
℃/W
Package Marking and Ordering Information
Part NO.
BT131-600E
Marking
BT131-600E
Package
TO-92
www.kersemi.com
1